Evolution of high-speed long-wavelength vertical-cavity surface-emitting lasers

被引：9
作者：
Hofmann, W. [1 ,2 ,3 ,4 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Tech Univ Berlin, Zentrum Nanophoton, D-10623 Berlin, Germany
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期
关键词：
MU-M VCSELS; BURIED TUNNEL-JUNCTION; 1.55-MU-M VCSEL; SEMICONDUCTOR-LASERS; OUTPUT POWER; WDM-PONS; MODULATION; GHZ; TRANSMISSION; PERFORMANCE;
D O I：
10.1088/0268-1242/26/1/014011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-speed buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSELs) covering the long-wavelength range from 1.3 mu m to 1.6 mu m have been developed in the last decade and achieved remarkable performance. The InP-based monolithic approach with a BTJ as a current aperture and an integrated gold heat sink, which originated at the Walter Schottky Institute, is reviewed in this review. Cutting-edge device performance like error-free operation at 25 Gb s(-1) data rate, large VCSEL arrays with high output powers, widely tunable devices, or novel nano-photonic device concepts could be realized.
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页数：11
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