Effect of NiO Growth Conditions on the Bipolar Resistance Memory Switching of Pt/NiO/SRO Structure

被引：14

作者：

Kurnia, F. ^{[1
]}

Hadiyawarman ^{[1
]}

Jung, C. U. ^{[1
]}

Liu, Chunli ^{[1
]}

Lee, S. B. ^{[2
]}

Yang, S. M. ^{[2
]}

Park, H. W. ^{[3
]}

Song, S. J. ^{[3
]}

Hwang, C. S. ^{[3
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Phys, Yongin 426791, South Korea

[2] Seoul Natl Univ, Sch Phys & Astron, ReCFI, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Mat Sscience & Engn, Seoul 151747, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 57卷 / 06期

关键词：

Resistance switching; NiO thin film; Pulsed laser deposition; FILMS; TEMPERATURE; OXIDE;

D O I：

10.3938/jkps.57.1856

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We deposited NiO thin films with SrRuO3 bottom electrodes on SrTiO3 (001) substrates by using pulsed laser deposition. The growth temperature and the oxygen pressure were varied in order to obtain NiO films with different structural and electrical properties. We investigated the I-V characteristics of the Pt/NiO/SRO structures and observed a strong dependence of bipolar resistance switching on the growth conditions of the NiO thin films. Stable bipolar memory resistance switching was observed only in the devices with NiO films deposited at 400 degrees C and 10 mTorr of O-2. The off-state I-V curve of bipolar switching showed a linear fitting to the Schottky effect, indicating its origin in the NiO/SRO interface. Our results suggest that the growth conditions of NiO may affect the bipolar switching behavior through the film's resistance, the film's crystallinity, or the status of the grain boundaries.

引用

页码：1856 / 1861

页数：6

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