Quantum-based simulation analysis of scaling in ultrathin body device structures

被引：27

作者：

Kumar, A ^{[1
]}

Kedzierski, J ^{[1
]}

Laux, SE ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, IBM,SRDC, Yorktown Hts, NY 10598 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 04期

关键词：

modeling; MOSFET scaling; silicon-on-insulator (SOI) technology;

D O I：

10.1109/TED.2005.844792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects.

引用

页码：614 / 617

页数：4

共 11 条

[1]

Buturla E. M., 1989, NASECODE VI. Proceedings of the Sixth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, P291

[2]

Doris B, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P267, DOI 10.1109/IEDM.2002.1175829

[3] Generalized scale length for two-dimensional effects in MOSFET's [J].

Frank, DJ ;

Taur, Y ;

Wong, HSP .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) :385-387

[4] Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects [J].

Laux, SE ;

Kumar, A ;

Fischetti, MV .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5545-5582

[5] Ballistic FET modeling using QDAME:: Quantum Device Analysis by Modal Evaluation [J].

Laux, SE ;

Kumar, A ;

Fischetti, MV .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (04) :255-259

[6]

Leong M. K., 1998, Simulation of Semiconductor Processes and Devices 1998. SISPAD 98, P129

[7] SCALING THEORY FOR DOUBLE-GATE SOI MOSFETS [J].

SUZUKI, K ;

TANAKA, T ;

TOSAKA, Y ;

HORIE, H ;

ARIMOTO, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) :2326-2329

[8] Two-dimensional quantum mechanical modeling of nanotransistors [J].

Svizhenko, A ;

Anantram, MP ;

Govindan, TR ;

Biegel, B ;

Venugopal, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2343-2354

[9] Scaling fully depleted SOICMOS [J].

Trivedi, VP ;

Fossum, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (10) :2095-2103

[10] A PHYSICAL SHORT-CHANNEL MODEL FOR THE THIN-FILM SOI MOSFET APPLICABLE TO DEVICE AND CIRCUIT CAD [J].

VEERARAGHAVAN, S ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1866-1875

← 1 2 →