A high power X-band internally-matched power amplifier with 705 W peak power and 51.7% PAE

被引：1

作者：

Gu, Liming ^{[1
]}

Feng, Wenjie ^{[2
,3
,4
]}

Zhou, Sutong ^{[1
]}

Tang, Shijun ^{[1
]}

Wang, Shuai ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Dept Microwave Power Device, Nanjing, Peoples R China

[2] South China Univ Technol, Guangdong Prov Key Lab Millimeter Wave & Terahert, Guangzhou 510006, Peoples R China

[3] Pazhou Lab, Guangzhou 510330, Peoples R China

[4] Nanjing Univ Sci & Technol, Dept Commun Engn, Nanjing, Peoples R China

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2021年 / 31卷 / 12期

基金：

中国国家自然科学基金;

关键词：

GaN; high power; internally-matched; power amplifier;

D O I：

10.1002/mmce.22881

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A high power and high efficiency fully internally-matched GaN power amplifier operating at X-band is proposed. The device is realized by matching four GaN power bars of 18-mm gate periphery. To reduce the size, single layer capacitors with high permittivity are used, and the impedance matching circuits are fabricated on Al2O3 ceramic substrate. The device exhibits saturated output power of more than 660 W with power gain above 9.8 dB within the frequency range of 8.2-8.8 GHz, based on the pulse mode of 100 mu s pulse width and 10% duty. In addition, the highest saturated output power and power added efficiency reach 705 W and 51.7% with packaging compact size (26 mm x 17.4 mm).

引用

页数：6

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