2T1M-Based Double Memristive Crossbar Architecture for In-Memory Computing

被引:0
作者
Vourkas, Ioannis [1 ,2 ]
Papandroulidakis, Georgios [1 ]
Sirakoulis, Georgios Ch. [1 ]
Abusleme, Angel [2 ]
机构
[1] Democritus Univ Thrace, Dept Elect & Comp Engn, Xanthi 67100, Greece
[2] Pontificia Univ Catolica Chile, Dept Elect Engn, Ctr Invest Nanotecnol & Mat Avanzados CIEN UC, Campus San Joaquin, Santiago 7820436, Chile
关键词
Memristor; memristive system; resistive switching; nanoelectronics; crossbar; resistive random access memory; high-radix arithmetic; SPICE; parallel computing; LOGIC OPERATIONS; CIRCUITS;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
The recent discovery of the memristor has renewed the interest for fast arithmetic operations via high-radix numeric systems. In this direction, a conceptual solution for high-radix memristive arithmetic logic units (ALUs) was recently published. The latter combines CMOS circuitry for data processing and a reconfigurable "segmented" crossbar memory block. In this paper we build upon such a conceptual design and propose a 3D extension of the classic crossbar topology via 2T1M cross-points which still permits the parallel creation of partial products for faster multiplication with lower circuit complexity. Furthermore, we present a binary to high-radix data conversion circuit to complement the state-programming module of the previous work. A simulation-based validation of read/write multi-level memory operations from/to the 2T1M 3D memristive crossbar was performed using SPICE and a threshold-type switching model of a bipolar voltage-controlled memristor. Such realization of in-memory computations could lead to faster arithmetic algorithms in future memristive ALUs.
引用
收藏
页码:265 / 280
页数:16
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