Effect of depolarization field on steep switching characteristics in negative capacitance field effect transistors

被引：4
|
作者：
Xiao, Yongguang [1 ,2 ]
Tan, Fengqian [1 ,2 ]
Yan, Luo [1 ,2 ]
Li, Gang [1 ,2 ]
Tang, Minghua [1 ,2 ]
Li, Zheng [1 ,2 ]
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 08期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
metal-ferroelectric-insulator-semiconductor field effect transistors; negative capacitance; depolarizing field; steep switching; SLOPE; MODEL;
D O I：
10.1088/1361-6641/ab8d48
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical model for describing the effect of depolarization field (E-d) in the negative capacitance (NC) field effect transistor (FET) was derived. Based on this model, the electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistor including the relationship between the depolarizing field and the gate voltage (V-g),E(d)and silicon surface potential, and the drain-source current of NC-FET andV(g)(transfer characteristics) were theoretically investigated. The computing results demonstrated that the surface potential amplification and the steep subthreshold slope characteristics happened at the gate voltage of about 0.4 V, results from the steep increase ofE(d)dependent onV(g)in the NC-FETs. It is expected that the derived results may provide some insight into the design and performance improvement for the NC-MFIS-FET.
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收藏
页数：7
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