Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process

被引：1

作者：

Jia, Qing-xuan ^{[1
,2
]}

Guo, Chun-yan ^{[3
,4
]}

Sun, Yao-yao ^{[1
,2
]}

Yang, Cheng-ao ^{[1
,2
]}

Lv, Yue-xi ^{[1
,2
]}

Jiang, Zhi ^{[1
,2
]}

Zheng, Da-Nong ^{[1
,2
]}

Han, Xi ^{[1
,2
]}

Jiang, Dong-wei ^{[1
,2
]}

Wang, Guo-wei ^{[1
,2
]}

Niu, Zhi-chuan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China

[4] Xi An Jiao Tong Univ, Xian 710049, Peoples R China

来源：

INFRARED, MILLIMETER-WAVE, AND TERAHERTZ TECHNOLOGIES V | 2018年 / 10826卷

关键词：

anti-reflection coatings; InAs/GaSb Type-II superlattices; infrared photodetectors;

D O I：

10.1117/12.2509181

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Near-infrared InAs/GaSb Type-II superlattices is widely used in biomimetics, sensing, color-imaging technology and other applications. An antireflection coating(AR coating) can help it perform better, making the infrared photodetector a higher responstivity and also a higher quantum efficiency. We produce a broadband AR coating by plasma-enhanced chemical vapor deposition(PECVD) then using the lift-off technology making no damage without any change in the usual Infrared detector process flow, a 260 nm SiO2 AR coating is transform onto the surface of the infrared photodetector. After using the AR coating, the antireflection can provide up to 40% light gain, while the average reflectivity of the surface of InAs/GaSb type-II superlattice is decreased from 33% to 14%. The responsitivity is increased obviously.

引用

页数：8

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