The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors

被引：17

作者：

Park, Mijeong ^{[1
]}

Jang, Jaeyoung ^{[1
]}

Park, Seonuk ^{[1
]}

Kim, Jiye ^{[1
]}

Seong, Jiehyun ^{[2
]}

Hwang, Jiyoung ^{[2
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Postech Organ Elect Lab, Pohang 790784, Gyungbuk, South Korea

[2] LG Chem Res Pk, Corp R&D, Taejon 305380, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 10期

关键词：

SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; OXIDE SEMICONDUCTORS;

D O I：

10.1063/1.3691920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691920]

引用

页数：4

共 17 条

[1] Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers [J].