Comprehensive numerical model for phase-change memory simulations

被引：9

作者：

Redaelli, A ^{[1
]}

Lacaita, AL ^{[1
]}

Benvenuti, A ^{[1
]}

Pirovano, A ^{[1
]}

机构：

[1] Politecn Milan, DEI, I-20133 Milan, Italy

来源：

SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices | 2005年

关键词：

D O I：

10.1109/SISPAD.2005.201527

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A "multi-physics" numerical model that couples a detailed electrical description with the heat equation and with a microscopic picture of the phase transition dynamics is presented. This model, implemented in a three dimensional semiconductor device solver, correctly reproduces the electronic switching effect in the amorphous chalcogenide alloy and the phase-transitions dynamics, providing steady-state and transient simulation results in good agreement with experimental data.

引用

页码：279 / 282

页数：4

共 7 条

[1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].