Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3

被引：92

作者：

Kim, Y. ^{[1
,2
]}

Chen, X. ^{[3
]}

Wang, Z. ^{[4
]}

Shi, J. ^{[4
]}

Miotkowski, I. ^{[5
]}

Chen, Y. P. ^{[5
]}

Sharma, P. A. ^{[6
]}

Sharma, A. L. Lima ^{[6
]}

Hekmaty, M. A. ^{[7
]}

Jiang, Z. ^{[3
]}

Smirnov, D. ^{[1
]}

机构：

[1] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA

[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[4] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[5] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[6] Sandia Natl Labs, Albuquerque, NM 87185 USA

[7] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL INSULATORS; SCATTERING; SURFACE; SILICON; BI2TE3;

D O I：

10.1063/1.3685465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Inelastic light scattering spectra of Bi2Se3 and Sb2Te3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A(1g)(2) phonons shows similar behavior in both materials. The temperature dependence of the peak position and linewidth is analyzed considering the anharmonic decay of optical phonons and the material thermal expansion. This work suggests that Raman spectroscopy can be used for thermometry in Bi2Se3- and Sb2Te3-based devices in a wide temperature range. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685465]

引用

页数：3

共 20 条

[1]

Aguilar R. Valdes, ARXIV11050237

[2] ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON [J].

BALKANSKI, M ;

WALLIS, RF ;

HARO, E .

PHYSICAL REVIEW B, 1983, 28 (04) :1928-1934

[3] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[4] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[5] Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals from 10 K to 270 K [J].

Chen, X. ;

Zhou, H. D. ;

Kiswandhi, A. ;

Miotkowski, I. ;

Chen, Y. P. ;

Sharma, P. A. ;

Sharma, A. L. Lima ;

Hekmaty, M. A. ;

Smirnov, D. ;

Jiang, Z. .

APPLIED PHYSICS LETTERS, 2011, 99 (26)

[6] Magnetoelectric Polarizability and Axion Electrodynamics in Crystalline Insulators (vol 102, 146805, 2009) [J].

Essin, Andrew M. ;

Moore, Joel E. ;

Vanderbilt, David .

PHYSICAL REVIEW LETTERS, 2009, 103 (25)

[7] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[8] Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 [J].

Hsieh, D. ;

Xia, Y. ;

Qian, D. ;

Wray, L. ;

Meier, F. ;

Dil, J. H. ;

Osterwalder, J. ;

Patthey, L. ;

Fedorov, A. V. ;

Lin, H. ;

Bansil, A. ;

Grauer, D. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

PHYSICAL REVIEW LETTERS, 2009, 103 (14)

[9] ANHARMONIC DECAY OF OPTICAL PHONONS [J].

KLEMENS, PG .

PHYSICAL REVIEW, 1966, 148 (02) :845-&

[10] Temperature dependence of the first-order Raman phonon lime of diamond [J].

Liu, MS ;

Bursill, LA ;

Prawer, S ;

Beserman, R .

PHYSICAL REVIEW B, 2000, 61 (05) :3391-3395

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