Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields

被引:90
作者
Mora-Ramos, M. E. [4 ]
Duque, C. A. [1 ]
Kasapoglu, E. [2 ]
Sari, H. [2 ]
Sokmen, I. [3 ]
机构
[1] Univ Antioquia, Inst Fis, Medellin 1226, Colombia
[2] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
[3] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey
[4] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62209, Morelos, Mexico
关键词
Nonlinear optics; Quantum well; Electric field; Magnetic field; Intense laser field; LO-PHONON INSTABILITY; 3RD-HARMONIC GENERATION; HYDROSTATIC-PRESSURE; ELECTRIC-FIELD; INTERSUBBAND TRANSITIONS; DONOR IMPURITIES; MAGNETIC-FIELD; BINDING-ENERGY; ABSORPTION; RECTIFICATION;
D O I
10.1016/j.jlumin.2011.11.008
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs-Ga1-xAlxAs quantum wells under applied electric and magnetic fields. The calculated quantities include linear optical absorption coefficient and relative change of the refractive index, as well as their corresponding third-order nonlinear corrections. The nonlinear optical rectification and the second and third harmonic generation coefficients are also reported. The DC applied electric field is oriented along the hererostructure growth direction whereas the magnetic field is taken in-plane. The calculations make use of the density matrix formalism to express the different orders of the dielectric susceptibility. Additionally, the model includes the effective mass and parabolic band approximations. The intense laser effects upon the system enter through the Floquet method that modifies the confinement potential associated to the heterostructure. The results correspond to several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation. They suggest that the nonlinear optical absorption and optical rectification are nonmonotone functions of the dimensions of the heterostructure and of the external perturbations considered in this work. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:901 / 913
页数:13
相关论文
共 65 条
[1]   ELECTRIC-FIELD DEPENDENCE OF THE INTERSUBBAND OPTICAL-ABSORPTION IN A SEMICONDUCTOR QUANTUM WELL [J].
AHN, D ;
CHUANG, SL .
SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (02) :153-157
[2]  
AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[3]   RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES [J].
ASMAR, NG ;
MARKELZ, AG ;
GWINN, EG ;
CERNE, J ;
SHERWIN, MS ;
CAMPMAN, KL ;
HOPKINS, PF ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1995, 51 (24) :18041-18044
[4]  
Boyd RW, 2008, NONLINEAR OPTICS, 3RD EDITION, P1
[5]   Laser effects on donor states in low-dimensional semiconductor heterostructures -: art. no. 153303 [J].
Brandi, HS ;
Latgé, A ;
Oliveira, LE .
PHYSICAL REVIEW B, 2004, 70 (15) :153303-1
[6]  
Brandi HS, 1998, PHYS STATUS SOLIDI B, V210, P671, DOI 10.1002/(SICI)1521-3951(199812)210:2<671::AID-PSSB671>3.0.CO
[7]  
2-L
[8]   Bright-to-dark exciton transition in symmetric coupled quantum wells induced by an in-plane magnetic field [J].
Chang, K ;
Peeters, FM .
PHYSICAL REVIEW B, 2001, 63 (15)
[9]   Role of the attractive intersite interaction in the extended Hubbard model [J].
Mancini, F. ;
Mancini, F. P. ;
Naddeo, A. .
EUROPEAN PHYSICAL JOURNAL B, 2009, 68 (03) :309-315
[10]   Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field [J].
Duque, C. A. ;
Kasapoglu, E. ;
Sakiroglu, S. ;
Sari, H. ;
Sokmen, I. .
APPLIED SURFACE SCIENCE, 2010, 256 (24) :7406-7413