Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET

In this research work, we have put forward Silicon based Nanotube structure with Dual Gate All around configuration. The proposed device has been compared with Conventional Nanowire structure and the comparison is concocted on account of analog parameters of both the devices. The structural parameters of both the devices are kept identical like work function, doping concentrations of Source, Channel and Drain regions. By using an inner core gate and an outer shell gate, the proposed device exhibited superior Analog characteristics over its Nanowire counterpart in terms of drive current (ION), Electrical criteria, capacitance, unity gain, and transconductance.