Theory of photogalvanic effect in asymmetric nanostructure arrays

被引：10

作者：

Chepelianskii, A. D. ^{[2
]}

Entin, M. V. ^{[1
]}

Magarill, L. I. ^{[1
]}

Shepelyansky, D. L.

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Ecole Normale Super, F-75231 Paris 05, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

关键词：

photogalvanic effect; antidot lattices;

D O I：

10.1016/j.physe.2007.08.046

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Free electron motion in a lattice (random and regular) of asymmetric antidots under the action of ac electric field is studied. Both analytical consideration (in the framework of Boltzmann equation) and computer simulations were used. Models of antidots include oriented semidisks and cuts with different reflectivity of sides. The stationary photocurrent is found for different polarizations of electric field. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1264 / 1266

页数：3

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