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A K-band low-noise amplifier using shunt RC-feedback and series inductive-peaking techniques
被引:1
作者:
Chen, Chi-Chen
[1
]
Lin, Yo-Sheng
[1
]
Chang, Jin-Fa
[1
]
Lee, Jen-How
[1
]
机构:
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
关键词:
K-band;
CMOS;
LNA;
inductive peaking;
RC feedback;
D O I:
10.1002/mop.23332
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A 28.2 GHz (K-band) low-noise amplifier (LNA) using standard 0.18-mu m CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascaded common-source stages, and a peaking inductor (L-g3) was added in the input terminal of the third stage to boost the peak gain (S-21) of 34.9% (simuation). Shunt RC feedback was adopted in the second and the third stage, respectively, for achieving good input and output impedance matching. At 28.2 GHz, this LNA achieved input return loss (S-11) of -13.4 dB, output return loss (S-22) of -20.5 dB, forward gain (S-21) of 12.9 dB, reverse isolation (S-12) of -50.2 dB, noise figure of 607 dB and input-referred 1-dB compression point (P1dB-in) of -10.8 dBm. The minimum noise figure was 5.75 dB at 28.8 GHz. The chip area was only 950 mu m x 590 mu m excluding the test pads. The power consumption was 30.56 mW from a 1.8-V power supply. (C) 2008 Wiley Periodicals, Inc.
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页码:1148 / 1152
页数:5
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