True blue InGaN laser for pico size projectors

被引：21

作者：

Strauss, U. ^{[1
]}

Brueninghoff, S. ^{[1
]}

Schillgalies, M. ^{[1
]}

Vierheilig, C. ^{[2
]}

Gmeinwieser, N. ^{[1
]}

Kuemmler, V. ^{[1
]}

Bruederl, G. ^{[1
]}

Lutgen, S. ^{[1
]}

Avramescu, A. ^{[1
]}

Queren, D. ^{[1
]}

Dini, D. ^{[1
]}

Eichler, C. ^{[1
]}

Lell, A. ^{[1
]}

Schwarz, U. T. ^{[2
]}

机构：

[1] OSRAM Opto Semicond GmbH, Leibnizstr 4, D-93055 Regensburg, Germany

[2] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES III | 2008年 / 6894卷

关键词：

InGaN laser; blue laser; projection; pico projection; wall plug efficiency;

D O I：

10.1117/12.761720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Red, green and blue semiconductor lasers are of great interest for full color laser projection. Mobile applications require low power consumption and very small laser devices. InGaN lasers are the best choice for the blue color in applications with output power requirements below 100mW: (1) they have much higher wall plug efficiencies than conventional blue frequency doubled diode pumped solid state lasers and (2) they are more compact than semiconductor IR lasers with subsequent second harmonic generation. We present blue InGaN lasers with high efficiency at a power consumption of several 100mW. Excellent epitaxial quality permits low internal losses. Threshold current densities and slope efficiencies are further optimized by improving the facet coating. The laser threshold current is as low as 25mA and the slope efficiency reaches 1W/A. We present a wall plug efficiency of 15% at output power levels of 60mW.

引用

页数：8

共 13 条

[1] Local strain and potential distribution induced by single dislocations in GaN -: art. no. 116102 [J].

Gmeinwieser, N ;

Gottfriedsen, P ;

Schwarz, UT ;

Wegscheider, W ;

Clos, R ;

Krtschil, A ;

Krost, A ;

Weimar, A ;

Brüderl, G ;

Lell, A ;

Härle, V .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)

[2]

Kümmler V, 2002, PHYS STATUS SOLIDI A, V194, P419, DOI 10.1002/1521-396X(200212)194:2<419::AID-PSSA419>3.0.CO

[3]

2-B

[4] Wavelength dependence of InGaN laser diode characteristics [J].

Nagahama, S ;

Yanamoto, T ;

Sano, M ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (5A) :3075-3081

[5] InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices [J].

Nakamura, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (03) :483-489

[6] Luminescence properties of defects in GaN -: art. no. 061301 [J].

Reshchikov, MA ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[7] Development of AlInGaN based blue-violet lasers on GaN and SiC substrates [J].

Rumbolz, C. ;

Bruederl, G. ;

Leber, A. ;

Eichler, C. ;

Furitsch, M. ;

Avramescu, A. ;

Miler, A. ;

Lell, A. ;

Strauss, U. ;

Haerle, V. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07) :1792-1796

[8] High-performance blue InGaN laser diodes with single-quantum-well active layers [J].

Ryu, H. Y. ;

Ha, K. H. ;

Lee, S. N. ;

Jang, T. ;

Son, J. K. ;

Paek, H. S. ;

Sung, Y. J. ;

Kim, H. K. ;

Kim, K. S. ;

Nam, O. H. ;

Park, Y. J. ;

Shim, J. I. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (21-24) :1717-1719

[9] Highly stable temperature characteristics of InGaN blue laser diodes [J].

Ryu, H. Y. ;

Ha, K. H. ;

Lee, S. N. ;

Jang, T. ;

Kim, H. K. ;

Chae, J. H. ;

Kim, K. S. ;

Choi, K. K. ;

Son, J. K. ;

Paek, H. S. ;

Sung, Y. J. ;

Sakong, T. ;

Nam, O. H. ;

Park, Y. J. .

APPLIED PHYSICS LETTERS, 2006, 89 (03)

[10] Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range [J].

Schwarz, Ulrich T. ;

Braun, Harald ;

Kojima, Kazunobu ;

Funato, Mitsuru ;

Kawakami, Yoichi ;

Nagahama, Shinichi ;

Mukai, Takashi .

NOVEL IN - PLANE SEMICONDUCTOR LASERS IV, 2007, 6485

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