InAs-based quantum cascade lasers - art. no. 69090U

被引：19

作者：

Devenson, J. ^{[1
]}

Teissier, R. ^{[1
]}

Cathabard, O. ^{[1
]}

Baranov, A. N. ^{[1
]}

机构：

[1] Univ Montpellier 2, Inst Elect Sud, CNRS, UMR 5314, F-34095 Montpellier, France

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS VII | 2008年 / 6909卷

关键词：

quantum cascade lasers; infrared lasers;

D O I：

10.1117/12.767653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different issues of the development of short wavelength quantum cascade lasers (QCLs) in the InAs/AlSb system, concerning both optical and electronic design, are considered. A plasmon enhanced waveguide is shown to be suitable for use in InAs-based QCLs operating at wavelengths near 3 Am. High performance lasers emitting near 3.3 mu m are demonstrated, as well as short wavelength QCLs emitting down to 2.75 mu m. It is shown that their performances are not limited neither by interband absorption across the small band gap of InAs, nor by the electron scattering into the L-minimum of the well material.

引用

页码：U9090 / U9090

页数：11

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