Investigation of C60F36 as low-volatility p-dopant in organic optoelectronic devices

被引:51
作者
Meerheim, Rico [1 ]
Olthof, Selina [1 ]
Hermenau, Martin [1 ]
Scholz, Sebastian [1 ]
Petrich, Annette [1 ]
Tessler, Nir [2 ]
Solomeshch, Olga [2 ]
Luessem, Bjoern [1 ]
Riede, Moritz [1 ]
Leo, Karl [1 ]
机构
[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
[2] Technion Israel Inst Technol, Dept Elect Engn, Nanoelect Ctr, IL-32000 Haifa, Israel
关键词
LIGHT-EMITTING-DIODES; THIN-FILMS; ZINC PHTHALOCYANINE; TETRAFLUOROTETRACYANOQUINODIMETHANE; EFFICIENCY; C-60;
D O I
10.1063/1.3590142
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate highly efficient small molecule organic light emitting diodes and organic solar cells based on the p-i-n-type structure using the fluorinated fullerene molecule C(60)F(36) as p-dopant in the hole transport layer. We present synthesis, chemical analysis, and energy level investigation of the dopant as well as the conductivity of organic layers consisting of a matrix of N,N,N',N'-tetrakis 4-methoxyphenyl-benzidine(MeO-TPD) or N,N'-[(Diphenyl-N,N'-bis)9, 9,-dimethyl-fluoren-2-yl]-benzidine(BF-DPB) doped by the fullerene compound. State of the art organic p-i-n devices containing C(60)F(36) show efficiencies comparable to devices with the commonly used p-dopant2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)-TCNQ). The advantages of the fullerene based dopant are the low volatility and high thermal stability, which is beneficial for device operation under elevated temperature. These properties make C(60)F(36) highly attractive for the usage as p-dopant in a broad spectrum of organic p-i-n devices like organic light emitting diodes, solar cells, memories, or transistors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3590142]
引用
收藏
页数:6
相关论文
共 25 条
  • [1] BIRNSTOCK J, 2006, SID INT S, V37, P1866
  • [2] Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
    Blochwitz, J
    Pfeiffer, M
    Fritz, T
    Leo, K
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (06) : 729 - 731
  • [3] Interface electronic structure of organic semiconductors with controlled doping levels
    Blochwitz, J.
    Fritz, T.
    Pfeiffer, M.
    Leo, K.
    Alloway, D. M.
    Lee, P. A.
    Armstrong, N. R.
    [J]. ORGANIC ELECTRONICS, 2001, 2 (02) : 97 - 104
  • [4] Preparation of C60F36 and C70F36/38/40
    Boltalina, OV
    Borschevskii, AY
    Sidorov, LN
    Street, JM
    Taylor, R
    [J]. CHEMICAL COMMUNICATIONS, 1996, (04) : 529 - 530
  • [5] Measurement of the lowest unoccupied molecular orbital energies of molecular organic semiconductors
    Djurovich, Peter I.
    Mayo, Elizabeth I.
    Forrest, Stephen R.
    Thompson, Mark E.
    [J]. ORGANIC ELECTRONICS, 2009, 10 (03) : 515 - 520
  • [6] Drechsel J., 2006, SID INT S, V37, P1692, DOI DOI 10.1889/1.2433332
  • [7] Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyanoquinodimethane: Interface versus bulk effects
    Gao, WY
    Kahn, A
    [J]. ORGANIC ELECTRONICS, 2002, 3 (02) : 53 - 63
  • [8] Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane:: A direct and inverse photoemission study
    Gao, WY
    Kahn, A
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (24) : 4040 - 4042
  • [9] An organic p-type dopant with high thermal stability for an organic semiconductor
    Gao, Zhi Qiang
    Mi, Bao Xiu
    Xu, Gui Zhen
    Wan, Yi Qian
    Gong, Meng Lian
    Cheah, Kok Wai
    Chen, Chin H.
    [J]. CHEMICAL COMMUNICATIONS, 2008, (01) : 117 - 119
  • [10] Acridine orange base as a dopant for n doping of C60 thin films
    Li, Fenghong
    Pfeiffer, Martin
    Werner, Ansgar
    Harada, Kentaro
    Leo, Karl
    Hayashi, Naoki
    Seki, Kazuhiko
    Liu, Xianjie
    Dang, Xuan-Dung
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)