Ultrafast time dependence of surface photo-voltage effect on p-type GaAs(100) surface

被引：22
|
作者：
Tokudomi, Shinji [1 ]
Azuma, Junpei [1 ]
Takahashi, Kazutoshi [1 ]
Kamada, Masao [1 ]
机构：
[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2008年 / 77卷 / 01期
关键词：
time-resolved photoemission spectroscopy; SPV; surface photo-voltage; p-GaAs(100); ultrafast; two-photon excitation;
D O I：
10.1143/JPSJ.77.014711
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The ultrafast surface photo-voltage (SPV) effect on the p-type GaAs(100) surface has been investigated by using the time-resolved valence-band photoemission spectroscopy with the Ti:sapphire regenerative amplifier. The rise of the SPV effect has been observed on the p-type GaAs(100). The time scale of the SPV rise depends on the dopant levels, indicating the important role of the surface electric field due to the band bending. On the other hand, the rise of the SPV effect on n-type GaAs(100) is faster than the experimental time resolution of 430 fs. It is considered that the SPV rise should be caused by the transport process of the photo-excited electrons and holes in the n- and p-type GaAs(100) surfaces, respectively.
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页数：5
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