Ultrafast time dependence of surface photo-voltage effect on p-type GaAs(100) surface

被引：22

作者：

Tokudomi, Shinji ^{[1
]}

Azuma, Junpei ^{[1
]}

Takahashi, Kazutoshi ^{[1
]}

Kamada, Masao ^{[1
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2008年 / 77卷 / 01期

关键词：

time-resolved photoemission spectroscopy; SPV; surface photo-voltage; p-GaAs(100); ultrafast; two-photon excitation;

D O I：

10.1143/JPSJ.77.014711

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The ultrafast surface photo-voltage (SPV) effect on the p-type GaAs(100) surface has been investigated by using the time-resolved valence-band photoemission spectroscopy with the Ti:sapphire regenerative amplifier. The rise of the SPV effect has been observed on the p-type GaAs(100). The time scale of the SPV rise depends on the dopant levels, indicating the important role of the surface electric field due to the band bending. On the other hand, the rise of the SPV effect on n-type GaAs(100) is faster than the experimental time resolution of 430 fs. It is considered that the SPV rise should be caused by the transport process of the photo-excited electrons and holes in the n- and p-type GaAs(100) surfaces, respectively.

引用

页数：5

共 50 条

[1] Ultrafast decay of surface photo-voltage effect on n-type GaAs(100) surface
Tokudomi, Shinji
Azuma, Junpei
Takahashi, Kazutoshi
Kamada, Masao
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2007, 76 (10)
[2] p-type Diamond Positive Surface Photo-voltage
Shaw, J. L.
Yater, J. E.
Pate, B. B.
Feygelson, T. I.
Hanna, J. M.
2013 26TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2013,
[3] SURFACE PHOTO-VOLTAGE SPECTROSCOPY IN INFRARED AND VISIBLE RANGE FOR P-TYPE CDTE
KUZMINSKI, S
PATER, K
SZAYNOK, AT
SURFACE SCIENCE, 1980, 91 (2-3) : 707 - 713
[4] DETERMINATION OF SURFACE-STATE PARAMETERS FROM SURFACE PHOTO-VOLTAGE TRANSIENTS FOR P-TYPE CDTE
KUZMINSKI, S
SZAYNOK, AT
SURFACE SCIENCE, 1981, 105 (2-3) : 565 - 569
[5] SURFACE PHOTO-VOLTAGE IN GE-DOPED P-TYPE ALXGA1-XAS
KALNITSKY, A
ZUKOTYNSKI, S
SUMSKI, S
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4744 - 4747
[6] SURFACE AND INTERFACE STUDY BY DERIVATIVE SURFACE PHOTO-VOLTAGE SPECTROSCOPY - GAAS
LAGOWSKI, J
SLUSARCZUK, MMG
WALUKIEWICZ, W
GATOS, HC
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 538 - 538
[7] Surface photo-voltage effect on Cr/GaAs(100) studied by photoemission spectroscopy with the combination of synchrotron radiation and laser
Takahashi, Kazutoshi
Tokudomi, Sinji
Nagata, Yusuke
Azuma, Junpei
Kamada, Masao
JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)
[8] Implementing surface photo-voltage in manufacturing
SimardNormandin, M
OPTICAL CHARACTERIZATION TECHNIQUES FOR HIGH-PERFORMANCE MICROELECTRONIC DEVICE MANFACTURING III, 1996, 2877 : 186 - 197
[9] THE TEMPERATURE-DEPENDENCE OF THE SURFACE PHOTO-VOLTAGE OF NICKEL PHTHALOCYANINE FILMS
DAHLBERG, SC
MUSSER, ME
JOURNAL OF CHEMICAL PHYSICS, 1980, 73 (08): : 4135 - 4136
[10] EFFECT OF THE CENTRAL LIGAND ON THE SURFACE PHOTO-VOLTAGE OF PHTHALOCYANINE FILMS
DAHLBERG, SC
MUSSER, ME
JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (11): : 5021 - 5025

← 1 2 3 4 5 →