Three junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

被引：7
|
作者：
Karimov, AV [1 ]
Karimova, DA [1 ]
机构：
[1] Uzbek Acad Sci, Inst Tech Phys, Tashkent 700084, Uzbekistan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 1-3期
关键词：
photodiode; GaAs; device structure;
D O I：
10.1016/S1369-8001(03)00080-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report for the first time electrical and optical properties of a three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode. Integration of three junctions in a single device reduces the total capacity of the detector and improves its noise figure. We find that such integrated structures have very small dark currents (in the low 10(-6) A/cm(2)) and high responsivities in a wide spectral range (several A/W at peak). This is achieved for illumination from any of the two surfaces of the device, and at both polarities of the applied voltage. (C) 2003 Published by Elsevier Science Ltd.
引用
收藏
页码：137 / 142
页数：6
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