Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing

被引：30

作者：

Zhang, J. J. ^{[1
]}

Montalenti, F. ^{[2
,3
]}

Rastelli, A. ^{[4
]}

Hrauda, N. ^{[1
]}

Scopece, D. ^{[4
]}

Groiss, H. ^{[1
]}

Stangl, J. ^{[1
]}

Pezzoli, F. ^{[4
]}

Schaeffler, F. ^{[1
]}

Schmidt, O. G. ^{[4
]}

Miglio, L. ^{[2
,3
]}

Bauer, G. ^{[1
]}

机构：

[1] Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

[2] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[3] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy

[4] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 16期

关键词：

GE ISLANDS; QUANTUM DOTS; SILICON; NANOTOMOGRAPHY; NANOCRYSTALS; TRANSISTORS; FIELD;

D O I：

10.1103/PhysRevLett.105.166102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The shape of coherent SiGe islands epitaxially grown on pit-patterned Si(001) substrates displays very uniform collective oscillations with increasing Ge deposition, transforming cyclically between shallower "dome'' and steeper "barn'' morphologies. Correspondingly, the average Ge content in the alloyed islands also displays an oscillatory behavior, superimposed on a progressive Si enrichment with increasing size. We show that such a growth mode, remarkably different from the flat-substrate case, allows the islands to keep growing in size while avoiding plastic relaxation.

引用

页数：4

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