Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

被引：17

作者：

Lee, Myoung-Jae ^{[1
]}

Lee, Chang Bum ^{[1
]}

Lee, Dongsoo ^{[1
]}

Lee, Seung Ryul ^{[1
]}

Hur, Jihyun ^{[1
]}

Ahn, Seung-Eon ^{[1
]}

Chang, Man ^{[1
]}

Kim, Young-Bae ^{[1
]}

Chung, U-In ^{[1
]}

Kim, Chang-Jung ^{[1
]}

Kim, Dong-Sik ^{[2
]}

Lee, Hosun ^{[3
]}

机构：

[1] Samsung Adv Inst Technol, Suwon 440600, South Korea

[2] Inha Tech Coll, Inchon 402753, South Korea

[3] Kyung Hee Univ, Suwon 449701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Nonvolatile memory; resistance switching; HIGH-DENSITY; RESISTANCE;

D O I：

10.1109/LED.2010.2048886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 mu A. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

引用

页码：725 / 727

页数：3