Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

被引：17

作者：

Lee, Myoung-Jae ^{[1
]}

Lee, Chang Bum ^{[1
]}

Lee, Dongsoo ^{[1
]}

Lee, Seung Ryul ^{[1
]}

Hur, Jihyun ^{[1
]}

Ahn, Seung-Eon ^{[1
]}

Chang, Man ^{[1
]}

Kim, Young-Bae ^{[1
]}

Chung, U-In ^{[1
]}

Kim, Chang-Jung ^{[1
]}

Kim, Dong-Sik ^{[2
]}

Lee, Hosun ^{[3
]}

机构：

[1] Samsung Adv Inst Technol, Suwon 440600, South Korea

[2] Inha Tech Coll, Inchon 402753, South Korea

[3] Kyung Hee Univ, Suwon 449701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Nonvolatile memory; resistance switching; HIGH-DENSITY; RESISTANCE;

D O I：

10.1109/LED.2010.2048886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 mu A. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

引用

收藏

页码：725 / 727

页数：3

相关论文

共 11 条

[1] Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode [J].

Ahn, Seung-Eon ;

Kang, Bo Soo ;

Kim, Ki Hwan ;

Lee, Myoung-Jae ;

Lee, Chang Bum ;

Stefanovich, Genrikh ;

Kim, Chang Jung ;

Park, Youngsoo .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) :550-552

[2]

Baek IG, 2005, INT EL DEVICES MEET, P769

[3] Changes in air saturation and air-water interfacial area during surfactant-enhanced air sparging in saturated sand [J].

Kim, Heonki ;

Choi, Kyong-Min ;

Moon, Ji-Won ;

Annable, Michael D. .

JOURNAL OF CONTAMINANT HYDROLOGY, 2006, 88 (1-2) :23-35

[4] Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change [J].

Kim, Ki Hwan ;

Kang, Bo Soo ;

Lee, Myoung-Jae ;

Ahn, Seung-Eon ;

Lee, Chang Bum ;

Stefanovich, Genrikh ;

Xianyu, Wen Xu ;

Kim, Chang Jung ;

Park, Youngsoo .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) :1036-1038

[5] A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories [J].

Lee, Myoung-Jae ;

Seo, Sunae ;

Kim, Dong-Chirl ;

Ahn, Seung-Eon ;

Seo, David H. ;

Yoo, In-Kyeong ;

Baek, In-Gyu ;

Kim, Dong-Sik ;

Byun, Ik-Su ;

Kim, Soo-Hong ;

Hwang, In-Rok ;

Kim, Jin-Soo ;

Jeon, Sang-Ho ;

Park, Bae Ho .

ADVANCED MATERIALS, 2007, 19 (01) :73-+

[6] Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory [J].

Lee, Myoung-Jae ;

Kim, Sun I. ;

Lee, Chang B. ;

Yin, Huaxiang ;

Ahn, Seung-Eon ;

Kang, Bo S. ;

Kim, Ki H. ;

Park, Jae C. ;

Kim, Chang J. ;

Song, Ihun ;

Kim, Sang W. ;

Stefanovich, Genrikh ;

Lee, Jung H. ;

Chung, Seok J. ;

Kim, Yeon H. ;

Park, Youngsoo .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (10) :1587-1593

[7] Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory [J].

Lee, Myoung-Jae ;

Han, Seungwu ;

Jeon, Sang Ho ;

Park, Bae Ho ;

Kang, Bo Soo ;

Ahn, Seung-Eon ;

Kim, Ki Hwan ;

Lee, Chang Bum ;

Kim, Chang Jung ;

Yoo, In-Kyeong ;

Seo, David H. ;

Li, Xiang-Shu ;

Park, Jong-Bong ;

Lee, Jung-Hyun ;

Park, Youngsoo .

NANO LETTERS, 2009, 9 (04) :1476-1481

[8] Observation of electric-field induced Ni filament channels in polycrystalline NiOx film [J].

Park, Gyeong-Su ;

Li, Xiang-Shu ;

Kim, Dong-Chirl ;

Jung, Ran-Ju ;

Lee, Myoung-Jae ;

Seo, Sunae .

APPLIED PHYSICS LETTERS, 2007, 91 (22)

[9] Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model [J].

Sato, Yoshihiro ;

Kinoshita, Kentaro ;

Aoki, Masaki ;

Sugiyama, Yoshihiro .

APPLIED PHYSICS LETTERS, 2007, 90 (03)

[10] Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 [J].

Szot, K ;

Speier, W ;

Bihlmayer, G ;

Waser, R .

NATURE MATERIALS, 2006, 5 (04) :312-320