High speed semiconductor lasers

被引：0
|
作者：
Dutta, NK [1 ]
机构：
[1] Univ Connecticut, Dept Phys, Photon Res Ctr, Storrs, CT 06269 USA
来源：
FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS III | 1998年 / 3285卷
关键词：
semiconductor; laser; distributed feedback; InGaAsP; electroabsorption; modulator;
D O I：
10.1117/12.307614
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The fabrication and performance characteristics of high speed semiconductor lasers are described in this paper. These include InGaAsP/InP lasers emitting near 1.55 mu m, InGaAs/GaAs lasers emitting near 1 mu m and integrated electroabsorption modulated lasers emitting near 1.55 mu m.
引用
收藏
页码：40 / 50
页数：11
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