Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

被引：35

作者：

Fayyaz, A. ^{[1
]}

Yang, L. ^{[1
]}

Riccio, M. ^{[2
]}

Castellazzi, A. ^{[1
]}

Irace, A. ^{[2
]}

机构：

[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England

[2] Univ Naples Federico II, Dept Elect Engn, Naples, Italy

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness; INSTABILITY;

D O I：

10.1016/j.microrel.2014.07.078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an extensive electro-thermal characterisation of latest generation Silicon Carbide (SiC) power MOSFETs under Unclamped Inductive Switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their ageing under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2185 / 2190

页数：6

共 14 条

[1]

[Anonymous], 2013, P 2013 15 EUROPEAN C

[2]

Blackburn DL, 1988, POW EL SPEC C 1988 P, V2, P681

[3] Thermal characterisation of power devices during transient operation [J].

Castellazzi, A ;

Honsberg-Riedl, M ;

Wachutka, G .

MICROELECTRONICS JOURNAL, 2006, 37 (02) :145-151

[4] Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications [J].

Castellazzi, A. ;

Ciappa, M. ;

Fichtner, W. ;

Lourdel, G. ;

Mermet-Guyennet, M. .

MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) :1754-1759

[5] Dynamics of power MOSFET switching under unclamped inductive loading conditions [J].

Fischer, K ;

Shenai, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) :1007-1015

[6] Characterization of transient gate oxide trapping in SiC MOSFETs using fast I-V techniques [J].

Gurfinkel, Moshe ;

Xiong, Hao D. ;

Cheung, Kin P. ;

Suehle, John S. ;

Bernstein, Joseph B. ;

Shapira, Yoram ;

Lelis, Aivars J. ;

Habersat, Daniel ;

Goldsman, Neil .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) :2004-2012

[7] Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements [J].

Lelis, Aivars J. ;

Habersat, Daniel ;

Green, Ronald ;

Ogunniyi, Aderinto ;

Gurfinkel, Moshe ;

Suehle, John ;

Goldsman, Neil .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) :1835-1840

[8]

Palmour JW, 2005, CS MANTECH 2005 APR, P229

[9] Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated [J].

Rabkowski, Jacek ;

Peftitsis, Dimosthenis ;

Nee, Hans-Peter .

IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 2012, 6 (02) :17-26

[10] Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology [J].

Ricci, M. ;

Pantellini, A. ;

Irace, A. ;

Breglio, G. ;

Nanni, A. ;

Lanzieri, C. .

MICROELECTRONICS RELIABILITY, 2011, 51 (9-11) :1725-1729

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