Terahertz Sensing Based on Impurity Transitions in delta-doped GaAs/AlAs Multiple Quantum Wells

被引：0

作者：

Seliuta, Dalius ^{[1
]}

Cehavicius, Bronislovas ^{[1
]}

Kavaliauskas, Julius ^{[1
]}

Balakauskas, Saulius ^{[1
]}

Valusis, Gintaras ^{[1
]}

Sherliker, Ben ^{[2
]}

Halsall, Matthew ^{[2
]}

Lachab, Mohamed ^{[3
]}

Khanna, Suraj P. ^{[3
]}

Harrison, Paul ^{[3
]}

Linfield, Edmund H. ^{[3
]}

机构：

[1] Inst Semicond Phys, A Gostauto 11, LT-01108 Vilnius, Lithuania

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

[3] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

基金：

英国工程与自然科学研究理事会;

关键词：

terahertz sensing; impurity transitions; GaAs/AlAs quantum wells;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be approximate to 4 ns.

引用

页码：183 / +

页数：2

共 5 条

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Cechavicius, B
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Seliuta, D.
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Ting, David Z. -Y.
Chang, Yia-Chung
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[J]. APPLIED PHYSICS LETTERS, 2007, 91 (07)
[5] Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells
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[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6039 - 6042

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