Flicker noise modelling of small geometry LDD MOSFETs

被引：1

作者：

Kalra, E

Kumar, A

Haldar, S

Gupta, RS

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Moti Lal Nehru Coll, Dept Phys, New Delhi 110021, India

来源：

MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 02期

关键词：

noise; small geometry; LDD-MOSFET;

D O I：

10.1016/S0026-2692(00)00102-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical 1/f noise model based on the evaluation of channel charge in small geometry Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. The intricacy of analyses when both the device dimensions are scaled together has been overcome and a simple model valid in the submicrometer range is presented. It is found that the noise in small geometry LDD MOSFETs is higher than that in the short channel LDD MOSFETs putting hard limit to miniaturisation widthwise. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：143 / 147

页数：5

共 19 条

[11] SIMULATION OF HOT-ELECTRON TRAPPING AND AGING OF NMOSFETS
ROBLIN, P
SAMMAN, A
BIBYK, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2229 - 2237
[12] On the flicker noise in submicron silicon MOSFETs
Simoen, E
Claeys, C
[J]. SOLID-STATE ELECTRONICS, 1999, 43 (05) : 865 - 882
[13] STEVE S, 1989, IEEE T ELECTRON DEV, V36, P1691
[14] CARRIER NUMBER FLUCTUATION MODEL OF 1/F NOISE IN A SEMICONDUCTOR-DEVICE
SUH, CH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 906 - 910
[15] Takeda E., 1982, IEEE J SOLID-ST CIRC, V17, P241
[16] Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs
Thomas, C
Haldar, S
Khanna, M
Rajesh, S
Gupta, KK
Gupta, RS
[J]. MICROELECTRONICS RELIABILITY, 1998, 38 (12) : 1955 - 1961
[17] 1/F NOISE IN THE LINEAR REGION OF LDD MOSFETS
TSAI, CYH
GONG, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2373 - 2377
[18] MODEL FOR 1-F NOISE IN MOS-TRANSISTORS BIASED IN THE LINEAR REGION
VANDAMME, LKJ
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 317 - 323
[19] NUMERICAL-SIMULATION OF HOT-ELECTRON PHENOMENA
WATANABE, DS
SLAMET, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1042 - 1049

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