Full-Quantum Study of AlGaN/GaN HEMTs with InAlN Back-Barrier

被引：0

作者：

Lucci, Luca ^{[1
]}

Barbe, Jean-Charles ^{[1
]}

Pala, Marco ^{[2
]}

机构：

[1] CEA, Leti, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France

[2] Univ Grenoble Alpes, CNRS, IMEP LAHC, F-38000 Grenoble, France

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

ELECTRON-MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A full-quantum simulation of the electron transport in the two-dimensional electron gas (2DEG) of a AlGaN/GaN/InAlN/GaN heterostructure is carried out using the non-equilibrium Green function (NEGF) approach. The introduction of the InAlN back-barrier and the use of a ultra-thin GaN layer for the charge transport considerably entangles the physics of the device. A full-quantum approach is then deemed necessary to shed light on the transport properties of these devices. Gate-length and channel-thickness scaling are studied to assess the impact of confinement effects on the elctrostatic integrity of the device.

引用

页码：128 / 131

页数：4

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