Full-Quantum Study of AlGaN/GaN HEMTs with InAlN Back-Barrier

被引：0
|
作者：
Lucci, Luca [1 ]
Barbe, Jean-Charles [1 ]
Pala, Marco [2 ]
机构：
[1] CEA, Leti, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France
[2] Univ Grenoble Alpes, CNRS, IMEP LAHC, F-38000 Grenoble, France
来源：
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年
关键词：
ELECTRON-MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A full-quantum simulation of the electron transport in the two-dimensional electron gas (2DEG) of a AlGaN/GaN/InAlN/GaN heterostructure is carried out using the non-equilibrium Green function (NEGF) approach. The introduction of the InAlN back-barrier and the use of a ultra-thin GaN layer for the charge transport considerably entangles the physics of the device. A full-quantum approach is then deemed necessary to shed light on the transport properties of these devices. Gate-length and channel-thickness scaling are studied to assess the impact of confinement effects on the elctrostatic integrity of the device.
引用
收藏
页码：128 / 131
页数：4
相关论文
共 50 条
  • [21] GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation
    Verma, Manish
    Nandi, Ashutosh
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (06)
  • [22] Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
    Murugapandiyan, P.
    Ravimaran, S.
    William, J.
    JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2017, 2 (04): : 515 - 522
  • [23] Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
    Martin-Horcajo, S.
    Wang, A.
    Bosca, A.
    Romero, M. F.
    Tadjer, M. J.
    Koehler, A. D.
    Anderson, T. J.
    Calle, F.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (03)
  • [24] Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier
    Shen, Pei
    Wang, Kai
    Chen, Ling
    Fang, Yi
    Liu, Yuqi
    Wang, Hong
    ELECTRONICS, 2022, 11 (13)
  • [25] AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier
    Liu Guo-Guo
    Wei Ke
    Huang Jun
    Liu Xin-Yu
    Niu Jie-Bin
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 30 (04) : 289 - 292
  • [26] Influence of AlGaN Back Barrier Layer Thickness on the Dynamic RON Characteristics of AlGaN/GaN HEMTs
    Wang, Wenjing
    Li, Liuan
    He, Liang
    Yang, Fan
    Chen, Zijun
    Zheng, Yue
    He, Lei
    Wu, Zhisheng
    Zhang, Baijun
    Liu, Yang
    2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2016, : 77 - 80
  • [27] Barrier-layer scaling of InAlN/GaN HEMTs
    Medjdoub, F.
    Alomari, M.
    Carlin, J. -F.
    Gonschorek, M.
    Feltin, E.
    Py, M. A.
    Grandjean, N.
    Kohn, E.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) : 422 - 425
  • [28] An extrinsic f(max) > 100 GHz InAlN/GaN HEMT with AlGaN back barrier
    Liu, Bo
    Feng, Zhihong
    Dun, Shaobo
    Zhang, Xiongwen
    Gu, Guodong
    Wang, Yuangang
    Xu, Peng
    He, Zezhao
    Cai, Shujun
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (04)
  • [29] The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure
    Zhang Jin-Cheng
    Zheng Peng-Tian
    Dong Zuo-Dian
    Duan Huan-Tao
    Ni Jin-Yu
    Zhang Jin-Feng
    Hao Yue
    ACTA PHYSICA SINICA, 2009, 58 (05) : 3409 - 3415
  • [30] Research on RF performance of GaN HEMT with graded Al composition AlGaN back-barrier
    Zhang, Ruihao
    Wan, Fayu
    Xu, Ru
    Xu, Jiarun
    Song, Runtao
    Wang, Long
    Zhao, Xing
    MICRO AND NANOSTRUCTURES, 2025, 197
12345