Full-Quantum Study of AlGaN/GaN HEMTs with InAlN Back-Barrier

被引：0
|
作者：
Lucci, Luca [1 ]
Barbe, Jean-Charles [1 ]
Pala, Marco [2 ]
机构：
[1] CEA, Leti, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France
[2] Univ Grenoble Alpes, CNRS, IMEP LAHC, F-38000 Grenoble, France
来源：
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年
关键词：
ELECTRON-MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A full-quantum simulation of the electron transport in the two-dimensional electron gas (2DEG) of a AlGaN/GaN/InAlN/GaN heterostructure is carried out using the non-equilibrium Green function (NEGF) approach. The introduction of the InAlN back-barrier and the use of a ultra-thin GaN layer for the charge transport considerably entangles the physics of the device. A full-quantum approach is then deemed necessary to shed light on the transport properties of these devices. Gate-length and channel-thickness scaling are studied to assess the impact of confinement effects on the elctrostatic integrity of the device.
引用
收藏
页码：128 / 131
页数：4
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