Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films

被引：1
作者：
Carvalho, T. T. [1 ,6 ,7 ]
Figueiras, F. G. [1 ,2 ,3 ]
Pereira, S. M. S. [2 ,3 ]
Fernandes, J. R. A. [4 ,5 ]
Perez de la Cruz, J. [1 ]
Tavares, P. B. [6 ,7 ]
Almeida, A. [1 ]
Agostinho Moreira, J. [1 ]
机构：
[1] Univ Porto, Fac Sci, IFIMUP IN, Dept Phys & Astron, R Campo Alegre 687, P-4169007 Oporto, Portugal
[2] Univ Aveiro, CICECO AIM, P-3810193 Aveiro, Portugal
[3] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal
[4] Univ Tras Os Montes & Alto Douro, INESC TEC, P-5001801 Vila Real, Portugal
[5] Univ Tras Os Montes & Alto Douro, Dept Phys, P-5001801 Vila Real, Portugal
[6] Univ Tras Os Montes & Alto Douro, CQVR, P-5001801 Vila Real, Portugal
[7] Univ Tras Os Montes & Alto Douro, Dept Chem, P-5001801 Vila Real, Portugal
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 17期
关键词：
BISMUTH FERRITE; BIFEO3; LA; TEMPERATURE; SUBSTRATE; CERAMICS;
D O I：
10.1007/s10854-017-7094-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work explores the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 (BLFM) thin films, grown by RF sputtering on platinum metalized silicon substrates, and its impact on the structural and ferroelectric properties. The optimized processing conditions were found to be a combination of deposition of an amorphous film at low substrate temperature (ae<currency>550 A degrees C), followed by a thermal treatment at 550 A degrees C during 30 min, in order to prevent bismuth volatilization. This procedure leads to the formation of high-quality monophasic crystalline films with well-defined piezoelectric response exhibiting micron size domains.
引用
收藏
页码：12690 / 12697
页数：8
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