Band-offset engineering in organic/inorganic semiconductor hybrid structures

被引:53
|
作者
Blumstengel, Sylke [1 ]
Glowatzki, Hendrik [1 ]
Sadofev, Sergey [1 ]
Koch, Norbert [1 ]
Kowarik, Stefan [1 ]
Rabe, Juergen P. [1 ]
Henneberger, Fritz [1 ]
机构
[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
关键词
ELECTRONIC-STRUCTURE;
D O I
10.1039/c004944c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Control over the electronic structure of organic/inorganic semiconductor interfaces is required to realize hybrid structures with tailored opto-electronic properties. An approach towards this goal is demonstrated for a layered hybrid system composed of p-sexiphenyl (6P) and ZnO. The molecular orientation can be switched from "upright-standing" to "flat-lying" by tuning the molecule-substrate interactions through aggregation on different crystal faces. The morphology change has profound consequences on the offsets between the molecular frontier energy levels and the semiconductor band edges. The combination of ZnO surface dipole modification through molecule adsorption and the orientation-dependence of the ionization energy of molecular layers shift these offsets by 0.7 eV. The implications for optimizing hybrid structures with regard to exciton and charge transfer are discussed.
引用
收藏
页码:11642 / 11646
页数:5
相关论文
共 50 条
  • [41] CRYSTAL ENGINEERING OF ORGANIC-INORGANIC HYBRID SOLIDS
    Orpen, A. G.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2002, 58 : C248 - C248
  • [42] CRYSTAL ENGINEERING OF HYBRID ORGANIC-INORGANIC SOLIDS
    RUIZHITZKY, E
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1988, 161 : 433 - 452
  • [43] BAND-OFFSET DEPENDENCE ON IMPACT IONIZATION RATES IN INALGAAS STAIRCASE AVALANCHE PHOTODIODES
    TSUJI, M
    MAKITA, K
    WATANABE, I
    TAGUCHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (8B): : L1048 - L1050
  • [44] MEASUREMENT OF THE VALENCE-BAND DISCONTINUITIES FOR MOLECULAR ORGANIC SEMICONDUCTOR INORGANIC SEMICONDUCTOR HETEROJUNCTIONS
    SO, FF
    FORREST, SR
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1341 - 1343
  • [45] Tuning of band-edges in type-I core-shell nanocrystals through band-offset engineering: selective quantum confinement effect
    Dey, Sukumar
    Pal, Amlan J.
    RSC ADVANCES, 2013, 3 (32): : 13225 - 13231
  • [46] Development of Organic Polymer/Inorganic Semiconductor Hybrid Solar Cells
    Zhang Huijing
    Hou Xin
    PROGRESS IN CHEMISTRY, 2012, 24 (11) : 2106 - 2115
  • [47] Fabrication of homogeneous hybrid nanorod of organic/inorganic semiconductor materials
    Guo, Yanbing
    Li, Yuliang
    Xu, Jinjie
    Liu, Xiaofeng
    Xu, Jialiang
    Lv, Jing
    Huang, Changshui
    Zhu, Mei
    Cui, Shuang
    Jiang, Lei
    Liu, Huibiao
    Wang, Shu
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (22): : 8223 - 8228
  • [48] Electrical characterization of organic-on-inorganic semiconductor Schottky structures
    Guellue, Oe
    Tueruet, A.
    Asubay, S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (04)
  • [49] Heterojunction band offset engineering
    Franciosi, A
    Van de Walle, CG
    SURFACE SCIENCE REPORTS, 1996, 25 (1-4) : 1 - +
  • [50] Heterojunction band offset engineering
    Franciosi, A.
    Walle, Ch.G.
    1996, Elsevier Science B.V., Amsterdam, Netherlands (25) : 1 - 4