Single-step sputtered Cu2SnSe3 films using the targets composed of Cu2Se and SnSe2

被引：53

作者：

Kuo, Dong-Hau ^{[1
]}

Haung, Wei-Di ^{[2
]}

Huang, Ying-Sheng ^{[3
]}

Wu, Jiun-De ^{[3
]}

Lin, Yan-Jih ^{[3
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 10607, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Inst Mat Sci & Technol, Taipei 10607, Taiwan

[3] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 10607, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Sputtering; Thin films; Cu2SnSe3; SnSe2; Hall measurement; CU2ZNSNSE4; THIN-FILMS; SOLAR-CELLS; OPTICAL-PROPERTIES; CUINSE2; GROWTH; LAYER;

D O I：

10.1016/j.tsf.2010.04.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2SnSe3 thin films were prepared by single-step D.C. sputtering at 100-400 degrees C for 3 h using targets composed of Cu2Se and SnSe2 in three different ratios of 2/1 (target A), 1.8/1 (target B), and 1.6/1 (target C). The advantages of self-synthesized SnSe2 instead of commercially available SnSe for depositing Cu2SnSe3 thin films were demonstrated. Effects of target composition and substrate temperature on the properties of Cu2SnSe3 thin films were investigated. Structure, surface morphology, composition, electrical and optical properties at different process conditions were measured. The 400 degrees C-sputtered films obtained from target B display with direct band gap of 0.76 eV, electrical resistivity of 0.12 Omega cm, absorption coefficient of 10(4)-10(5) cm(-1), carrier concentration of similar to 1.8 x 10(19) cm(-3), and electrical mobility of 2.9 cm(2)/V s. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7218 / 7221

页数：4

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