Single-source routes to cobalt sulfide and manganese sulfide thin films

被引：33
作者：
Srouji, F
Afzaal, M
Waters, J
O'Brien, P
机构：
[1] Univ Manchester, Manchester Mat Sci Ctr, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England
[3] Aleppo Univ, Fac Sci, Dept Phys, Aleppo, Syria
来源：
CHEMICAL VAPOR DEPOSITION | 2005年 / 11卷 / 02期
关键词：
D O I：
10.1002/cvde.200404185
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The air stable compounds [M(S2CNMe"HeX)(3)] (M = Co Mn) have been shown to be effective single-source precursors for the tion of metal chalcoggenicles by aerosol -assisted (AA) CVD. cobalt sulfide thin films have various compositions depending on Growth temperatures. as indicated by XRPD, whereas only a single phase manganese sulfide has been deposited at various growth temperatures. films are further characterized by SEM/EDAX and TEM.
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页码：91 / +
页数：5
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