Amorphous silicon and germanium films for uncooled microbolometers

被引：22

作者：

Enukova, TA ^{[1
]}

Ivanova, NL ^{[1
]}

Kulikov, YV ^{[1
]}

Malyarov, VG ^{[1
]}

Khrebtov, IA ^{[1
]}

机构：

[1] SI Vavilov State Opt Inst, All Russian Sci Ctr, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 07期

关键词：

D O I：

10.1134/1.1261727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of using amorphous silicon and germanium films prepared by magnetron sputtering as components in uncooled microbolometers has been analyzed experimentally and results are presented. Amorphous silicon and germanium films having activation energies of 0.135 and 0.2 eV, and resistivities of 50 and 0.4 k Omega.cm, respectively, were fabricated. (C) 1997 American Institute of Physics. [S1063-7850(97)00407-2].

引用

页码：504 / 506

页数：3

共 7 条

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