High average power and short pulse duration continuous wave mode-locked Nd:GdVO4 laser with a semiconductor absorber mirror

被引：7
|
作者：
Peng, J. Y. [1 ]
Wang, B. S.
Wang, Y. G.
Miao, J. G.
Hao, E. J.
Tan, H. M.
Qian, L. S.
Ma, X. Y.
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130022, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
LASER PHYSICS | 2007年 / 17卷 / 08期
关键词：
D O I：
10.1134/S1054660X07080026
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.
引用
收藏
页码：1033 / 1036
页数：4
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