Polycrystalline silicon thin films on SiC substrates for solar cells

被引：0
|
作者：
Li, HF [1 ]
Huang, Y
Wan, ZJ
Zhang, HX
Zhang, LM
Xu, Y
Li, XD
机构：
[1] Tsing Hua Univ, Grad Sch Shenzhen, Shenzhen 510855, Peoples R China
[2] Tsinghua Univ, Dept Mat Sci & Eng, Beijing 100084, Peoples R China
[3] Beijing Solar Energy Res Inst, Beijing 100083, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2 | 2005年 / 280-283卷
关键词：
ceramic substrate; poly silicon film; RTCVD;
D O I：
10.4028/www.scientific.net/KEM.280-283.1147
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm x 20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 mum and its preferred orientation is [III] after ZMR process.
引用
收藏
页码：1147 / 1148
页数：2
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