Near-Infrared photodetectors based on 2D Bi2S3

被引：21
作者：
Chitara, Basant [1 ]
Kolli, Bhargava S. C. [2 ]
Yan, Fei [1 ]
机构：
[1] North Carolina Cent Univ, Dept Chem & Biochem, Durham, NC 27707 USA
[2] Univ Florida, Dept Biol, Gainesville, FL 32611 USA
来源：
CHEMICAL PHYSICS LETTERS | 2022年 / 804卷
基金：
美国国家科学基金会;
关键词：
CVD; 2D Bi2S3; NIR photodetectors; HIGH-PERFORMANCE; ELASTIC PROPERTIES; HIGH-RESPONSIVITY; LAYER; MOS2; NANOSHEETS; DEGRADATION; OXIDATION; GROWTH; GAS;
D O I：
10.1016/j.cplett.2022.139876
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm(-2)V(-1)s(-1) with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW(-1), an external quantum efficiency of 2500%, a detectivity in the order of 10(10) Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.
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页数：6
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