Room-temperature Sputtered NiOx for hysteresis-free and stable inverted Cs-FA mixed-cation perovskite solar cells

被引：10

作者：

Yan, Mengying ^{[1
]}

Xiang, Tianxing ^{[1
]}

Yu, Xinxin ^{[1
]}

Xiao, Junyan ^{[1
]}

Li, Wei ^{[1
]}

Ku, Zhiliang ^{[1
]}

Huang, Fuzhi ^{[1
]}

Zhong, Jie ^{[1
]}

Peng, Yong ^{[1
]}

Cheng, Yi-bing ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, 122 Luoshi Rd, Wuhan 430070, Hubei, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 115卷

关键词：

Room-temperature; Magnetron sputtering; NiOx HTL; Cs-FA mixed-cation perovskite; Stability; HOLE TRANSPORT LAYER; NICKEL-OXIDE; ION MIGRATION; ULTRA-THIN; EFFICIENT; PERFORMANCE; CRYSTALLIZATION; NANOPARTICLES; STABILITY;

D O I：

10.1016/j.mssp.2020.105129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this research, a room-temperature sputtering technology for fabricating high performance NiOx film was developed, which was applicable for inverted cesium (Cs)-formamidinium (FA) mixed-cation perovskite solar cells (PSCs). The Ni3+/Ni2+ ratio in sputtered NiOx film was effectively adjusted by controlling Ar pressure while sputtering. NiOx films with appropriate Ni3+/Ni2+ ratio exhibit uniform surface morphology, high transmittance, and better energy level match with the perovskite layer. By using this sputtered NiOx film as hole transporting layer, short-circuit current density (J(sc)), open-circuit voltage (V-oc), fill factor (FF) and power conversion efficiency (PCE) of a champion inverted PSC were 19.25 mA/cm(2), 1.05 V, 0.80 and 16.23%, respectively. Also, these devices remained 90.6% of their initial PCE after light soaking at a surrounding temperature of 50 degrees C for more than 600 h.

引用

页数：8

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