A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

被引:17
作者
Shen, Li-Hua [1 ]
Ma, Wen-Yue [1 ]
Zhang, Gui-Lian [1 ]
Yang, Shi-Peng [1 ]
机构
[1] Shaoyang Univ, Dept Phys, Shaoyang 422004, Hunan, Peoples R China
关键词
Magnetically modulated semiconductor nanostructure; The delta-doping; Spin polarization; Tunable spin filter; 2-DIMENSIONAL ELECTRON-GAS; BARRIER NANOSTRUCTURE; POLARIZATION; TRANSPORT; SUPERLATTICE; SPLITTER; STATES; LAYERS; WELL; BIAS;
D O I
10.1016/j.physe.2015.03.021
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on a theoretical investigation of spin-polarized transport in a delta-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the delta-doping. Therefore, one can conveniently tailor the behaviour of the spin polarized electron by tuning the delta -doping, and such a device can be employed as a controllable spin filter for spintronics. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:39 / 42
页数:4
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