机构:
Seoul Natl Univ, Dept Phys & Astron, Seoul 151, South KoreaSeoul Natl Univ, Dept Phys & Astron, Seoul 151, South Korea
Lee, Takhee
[1
]
Chen, Yong
论文数: 0引用数: 0
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机构:
Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA USASeoul Natl Univ, Dept Phys & Astron, Seoul 151, South Korea
Chen, Yong
[2
,3
]
机构:
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151, South Korea
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[3] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA USA
Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.