Organic resistive nonvolatile memory materials

被引:99
作者
Lee, Takhee [1 ]
Chen, Yong [2 ,3 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151, South Korea
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[3] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA USA
关键词
THIN-FILM; ELECTRICAL BISTABILITY; BISTABLE MEMORY; POLYMER; DEVICES; DIODE; POLY(N-VINYLCARBAZOLE); ELECTROLUMINESCENCE; TRANSISTORS; TRANSITION;
D O I
10.1557/mrs.2012.4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.
引用
收藏
页码:144 / 149
页数:6
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