Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

被引：17
作者：
Pi, C. [1 ]
Ren, Y. [2 ]
Liu, Z. Q. [1 ]
Chim, W. K. [1 ,2 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 03期
关键词：
MEMORIES; MODEL;
D O I：
10.1149/2.008203esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report on the unipolar resistive switching (RS) phenomenon in yttrium oxide (Y2O3) metal-insulator-metal structures. The RS behavior for Y2O3 shows a superior ON/OFF resistance ratio of greater than 106 and good memory retention reliability performance of at least 10(6) seconds at room temperature. By adding a thin yttrium (Y) layer to form a Y-Y2O3 bilayer structure, a reduction in the RESET current by two orders of magnitude is achieved, which is advantageous in reducing the total switching energy consumption for resistive random access memory application. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.008203esl] All rights reserved.
引用
收藏
页码：G5 / G7
页数：3
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