CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver

被引：0
|
作者：
Huang, Zhe-Yang [1 ]
Huang, Che-Cheng [2 ]
Chen, Chun-Chieh [3 ]
Hung, Chung-Chih [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu, Taiwan
[2] NARL, Instrument Technol Res Ctr, Hsinchu, Taiwan
[3] Chung Yuan Christian Univ, Dept Elect Engn, Chungli, Taiwan
来源：
2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2 | 2007年
关键词：
RFIC; ultra-wideband; UWB; notch filter; LNA and low-noise amplifier;
D O I：
10.1109/ISICIR.2007.4441887
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.
引用
收藏
页码：418 / +
页数：2
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