CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver

被引：0

作者：

Huang, Zhe-Yang ^{[1
]}

Huang, Che-Cheng ^{[2
]}

Chen, Chun-Chieh ^{[3
]}

Hung, Chung-Chih ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu, Taiwan

[2] NARL, Instrument Technol Res Ctr, Hsinchu, Taiwan

[3] Chung Yuan Christian Univ, Dept Elect Engn, Chungli, Taiwan

来源：

2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2 | 2007年

关键词：

RFIC; ultra-wideband; UWB; notch filter; LNA and low-noise amplifier;

D O I：

10.1109/ISICIR.2007.4441887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.

引用

页码：418 / +

页数：2

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