Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions

被引：6

作者：

Fedorov, MI ^{[1
]}

Zaitsev, VK ^{[1
]}

Eremin, IS ^{[1
]}

Gurieva, EA ^{[1
]}

Burkov, AT ^{[1
]}

Konstantinov, PP ^{[1
]}

Vedernikov, MV ^{[1
]}

Samunin, AY ^{[1
]}

Isachenko, GN ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287467

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In this paper the results of the study of kinetic properties of the Mg2Si0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Si0.4Sn0.6 solid solution with of p-type with various hole concentration (up to 4 (.) 10(19)cm(-3)). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.

引用

页码：134 / 137

页数：4

共 6 条

[1]

FEDOROV MI, 2000, P 19 INT C THERM ICT, P17

[2]

GRUZINOV BF, 1972, PRIB TEKH EKSP, P225

[3]

Winkler U., 1955, HELV PHYS ACTA, V28, P633

[4]

Zaitsev V. K., 1969, SOVIET PHYS SOL ST, V11, P3000

[5]

ZAITSEV VK, 1995, SEMICONDUCTORS+, V29, P490

[6] Some features of the conduction band structure, transport and optical properties of n-type Mg2Si-Mg2Sn alloys [J].

Zaitsev, VK ;

Fedorov, MI ;

Burkov, AT ;

Gurieva, EA ;

Eremin, IS ;

Konstantinov, PP ;

Ordin, SV ;

Sano, S ;

Vedernikov, MV .

XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, :151-154

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