1/f noise in NbN/AlN/NbN Josephson junction with a low critical current density

被引：0
|
作者：
Qiu, W. [1 ]
Makise, K. [1 ]
Terai, H. [1 ]
Wang, Z. [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Kobe Adv ICT Res Ctr, Kobe, Hyogo 6512492, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2011年 / 471卷 / 21-22期
关键词：
Superconducting qubit; Josephson junction; 1/f noise;
D O I：
10.1016/j.physc.2011.05.157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fabricating high quality Josephson junction is essential in superconducting qubit circuits. In this letter, high quality tunnel junctions with a low critical current density of similar to 32 A/cm(2) were fabricated. The 1/f noise parameter eta was obtained from junctions' low frequency voltage noise power spectral density Sv(f) = 1/f eta/A(IbRD)(2). Our findings showed that the noise spectrum is junction linear dimension dependent, indicating the junction's side leakage current induced by defects in the amorphous oxide insulator dominates the origin of the 1/f noise in our epitaxial NbN/AlN/NbN tunnel junctions. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1196 / 1198
页数：3
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