Topological phase transition in layered XIn2P2 (X = Ca, Sr)

被引:1
作者
Wang, Zhenwei [1 ]
Wang, Guangtao [1 ]
Shi, Xianbiao [1 ]
Wang, Dongyang [1 ]
Tian, Xin [1 ]
机构
[1] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Henan, Peoples R China
关键词
first-principles calculations; topological insulator; line-node semimetal; DIRAC SEMIMETAL; INSULATORS; NOISE;
D O I
10.1088/1361-6463/aa8eaf
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on fully relativistic first-principles calculations, we studied the topological properties of layered XIn2P2 (X = Ca, Sr). Band inversion can be induced by strain without SOC, forming one nodal ring in the k(z) = 0 plane, which is protected by the coexistence of time reversal and glide mirror symmetries. Including SOC, a substantial band gap is opened along the nodal line and the line-node semimetal would evolve into a topological insulator. These results reveal a category of materials showing quantum phase transition from trivial semiconductors and topologically nontrivial insulators by tuneable elastic strain engineering. Our investigations provide a new perspective about the formation of topological line-node semimetal under stain.
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页数:5
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