MOCVD-grown, 1.3 μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

InxGa1-xAst-yNy quaternary alloys offer the promise of longer wavelength, greater than or equal to 1.3 pm optical transceivers grown on GaAs substrates. To achieve, acceptable radiative efficiencies at 1.3 pm, highly-strained InGaAsN quantum wells (x approximate to 0.4, y approximate to 0.005) are being developed as laser active regions. By introducing GaAsP layers into the active region for strain-compensation, gain can be increased using multiple InGaAsN quantum wells. In this work, we report the first strain-compensated, 1.3 pm InGaAsN MQW lasers, Our devices were grown by metal-organic chemical vapor deposition. Lasers with InGaAsN quantum well active regions are proving superior to lasers constructed with competing active region materials. Under pulsed operation, our 1.3 pm InGaAsN lasers displayed negligible blue-shift from the low-injection LED emission, and state-of-the-art characteristic temperature (159 K) was obtained for a 1.3 mum laser.