Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

被引:167
|
作者
Kim, YH [1 ]
Hwang, MS
Kim, HJ
Kim, JY
Lee, Y
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Jusung Engn Co Ltd, R&D Div, Kyonggi Do 464890, South Korea
关键词
D O I
10.1063/1.1402152
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bonding characteristics of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide (SiOF) and carbon-incorporated silicon oxide (SiOC) films prepared by plasma enhanced chemical vapor deposition were investigated by Fourier transform infrared spectroscopy (FTIR). The frequency of Si-O stretching vibration mode in SiOF film shifted to higher wave number (blueshift) with the increase of fluorine incorporation, while that in SiOC film shifted to lower wave number (redshift) as the carbon content increased. In N-2-annealed SiOC film, the Si-O stretching frequency slightly shifted to lower wave number. To elucidate these phenomena, we have developed the "bonding structure model" based on the electronegativity of an atom. The frequency shifts observed in the FTIR spectra of SiOF and SiOC films were well explained by this model. (C) 2001 American Institute of Physics.
引用
收藏
页码:3367 / 3370
页数:4
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