Emitter size effects and recombination at the emitter periphery in self-aligned InP/GaAsSb/InP DHBTs

被引：0

作者：

Tao, N ^{[1
]}

Lin, HG ^{[1
]}

Bolognesi, CR ^{[1
]}

机构：

[1] Simon Fraser Univ, Sch Engn Sci, CSDL, Burnaby, BC V5A 1S6, Canada

来源：

2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Surface recombination effects are studied in both rion-self-aligned and self-alligned NpN InP/GaAsSb/InP unpassivated DHBTs down to sub-micrometer emitter dimensions. The present study is motivated by the drive to scale InP DHBTs for higher speeds and integration densities. Self-aligned InP/GaAsSb/InP DHBTs are characterized by weak emitter size effects (ESEs), and periphery recombination currents are found to be very nearly identical to published results for InP/GaInAs SHBTs despite the major differences in emitter Junction band alignments ("type-II" vs. "type-I") and emitter injection mechanisms (thermal vs. hot electron injection). The correspondence of measured periphery currents in both systems indicates that ESEs are dominated by a mechanism common to InP/GaAsSb and InP/GaInAs devices: this requirement is fulfilled by the direct electron injection from the InP emitter mesa sidewalls onto the extrinsic base surface.

引用

页码：452 / 455

页数：4

共 18 条

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